MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM

Self-assembled Sb-based quantum dots (QDs) were grown by metal-organic vapo ur phase epitaxy and assessed by means of atomic force microscopy, transmis sion electron microscopy and photoluminescence. Two series of InSb QDs in a GaSb matrix were grown at 490 +/- 10 degrees C and luminesced in the mid-i nfrared at about 1.7 mu m. Reductions in the III/V ratio and growth rate as used for the second series resulted in a change of the morphology of the I nSb islands from hillocks without facets and a low level of order, to dumbb ell shaped islands with distinct facets and a higher level of order. Self-a ssembled GaSb islands were grown on GaAs at 550 degrees C and assessed for comparison by means of AFM.