Linear fracture mechanics analysis on growth of interfacial delamination in LSI plastic packages under temperature cyclic loading - Part II: Materialproperties and package geometry factors
T. Saitoh et al., Linear fracture mechanics analysis on growth of interfacial delamination in LSI plastic packages under temperature cyclic loading - Part II: Materialproperties and package geometry factors, IEEE T AD P, 23(3), 2000, pp. 554-560
A comprehensive study is made to evaluate the effects of material propertie
s and package geometry factors on the delamination growth along the interfa
ces of a die-bonding layer and the bottom surface of the die pad in large s
cale integration (LSI) packages subjected to temperature cyclic loading. Th
e effects of the coefficient of thermal expansion and Young's modulus of bo
th the encapsulant resin and die-bonding material, as well as such package
geometry factors as thickness, width, and chip size, are investigated. Nume
rical fracture mechanics analyses are conducted for three models of delamin
ation geometries, for which relatively high stress intensity factors are in
duced. The effects of these design parameters on delamination growth are de
termined, and guidelines for designing packages with leadframes made of Cu
alloy or Fe-42%Ni alloy (alloy 42) are established.