Surface morphology development during molecular beam epitaxy growth on a GaAs(100) vicinal surface

Using a kinetic Monte Carlo simulation, the homoepitaxial growth on a GaAs( 100) vicinal surface misoriented toward the [0 (1) over bar 1] direction ha s been studied. The growth mode transition, the topmost coverage variation and the surface morphology development are examined by varying the As/Ga fl ux ratio as well as the temperature. The kinetics of As play an important r ole in determining the growth mode transition, the coverage variation and t he surface morphology during growth, which are similar to the case of a vic inal surface misoriented toward the [011] direction. A continuous growth mo de transition is observed and is related to the surface morphology.