Electromigration of Ag on Au-precovered Si(111) surfaces was investigated b
y in-situ ultrahigh vacuum scanning electron microscopy and mu-probe reflec
tion-high-energy electron diffraction (RHEED). Migration behaviors of a Ag-
film patch strongly depended on Au coverage theta(Au) and corresponding sur
face structures. When theta(Au) < 0.7 monolayer (ML), the patch expanded pr
eferentially towards the cathode to attain a maximum area in which the sum
of Ag and Au coverages were always about 1 ML irrespective of theta(Au), re
sulting in two-dimensional (2D) alloy phases (showing root 3 x root 3 RHEED
patterns) with different Au/Ag concentration ratios. The largest expansion
of the patch area was achieved on a (5 x 2 + alpha-root 3 x root 3)-Au mix
ed phase structure (theta(Au) similar to 0.7 ML). However, when theta(Au) >
0.7 ML, the patch expansion was greatly reduced. Especially on the beta-ro
ot 3 x root 3-Au surface (theta(Au) similar to 1.0 ML), the patch showed no
directional expansion towards the cathode. But Ag atoms were observed to m
igrate inside the patches on all substrates (including the beta-root 3 x ro
ot 3-Au surface) to form 3D islands near terrace edges.