Surface oxidation kinetics of GaAs oxide growth by liquid phase chemical-enhanced technique

The initial stage of GaAs oxidation by a near-room-temperature liquid phase chemical-enhanced technique has been studied. Based on the experimental re sults of X-ray photoelectron spectroscopy, a complete model illustrating th e chemical composition of the grown oxide film has been established. To cla rify the kinetics of oxide growth in a liquid solution in more detail, we h ave also performed selective oxidation and surface profile measurements. Un usual features of the oxide growth kinetics have been observed by investiga ting the physical structure of oxide at the edge of mask in the selective o xidation.