InAs quantum dots growth by modified droplet epitaxy using sulfur termination

We have applied the modified droplet epitaxy method using sulfur terminatio n to fabricate InAs quantum dots on GaAs(001) substrates for the first time . It is observed that the S-terminated surface effectively prevents the two -dimensional growth of InAs, forming InAs nanocrystals. From the magneto-ph otoluminescence measurements of this structure, three-dimensional quantum c onfinement effect was confirmed. This modified droplet epitaxy method is pr omising for the fabrication of quantum dots, not only in the lattice-matche d system but also in the lattice-mismatched system.