Chemical and electrochemical nanofabrication processes for Schottky in-plane gate GaAs single and coupled quantum wire transistors

Chemical and electrochemical nanofabrication processes used fur fabricating GaAs-based single and coupled quantum wire transistors (QWTrs) utilizing S chottky in-plane gate (IPG) structures are described. IPG and metal dot for mation processes using a wet chemical etching and an in situ electrochemica l process were optimized for a novel nanodevice fabrication. Fabricated sin gle and coupled QWTrs showed conductance quantization and oscillation chara cteristics at low temperatures, demonstrating the tight gate control capabi lity.