Comparison of breakdown behavior in electron-irradiated and proton-irradiated silicon pn junctions

We compared the turn-off transient characteristics of electron-irradiated a nd proton-irradiated silicon pn junctions. Three types of irradiations were carried out: by 270 keV electrons, 2 MeV electrons, and 2 MeV protons. P-t ype silicon irradiated with 2 MeV electrons shows very large current peaks during turn-off. Proton-irradiated p-type silicon shows much weaker current peaks, while n-type silicon does not show these peaks. It is generally con sidered that a 270 keV electron energy is not strong enough to introduce de fects. However, our de and transient data show that a 270 keV electron can also introduce defects. Among the three types of irradiations mentioned abo ve, 270 keV electron irradiation shows the lowest forward voltage drop and lowest rum-off charge.