Nitrogen depth profiling in ultrathin silicon oxynitride films with high-resolution rutherford backscattering spectroscopy

Citation
K. Kimura et al., Nitrogen depth profiling in ultrathin silicon oxynitride films with high-resolution rutherford backscattering spectroscopy, JPN J A P 1, 39(7B), 2000, pp. 4663-4665
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
7B
Year of publication
2000
Pages
4663 - 4665
Database
ISI
SICI code
Abstract
Nitrogen depth profiles in ultrathin silicon oxynitride films (2.5-8 nm) ar e measured by high-resolution Rutherford backscattering spectroscopy (HRBS) . In order to reduce the large background due to the substrate silicon, HRB S spectra are measured under [111] channeling conditions. It is demonstrate d that the HRBS/channeling technique provides the absolute concentration va lues and a depth resolution of sub-nm can be achieved. The nitrogen profile s are also measured by secondary ion mass spectroscopy (SIMS) and Auger ele ctron spectroscopy (AES). The AES result roughly agrees with the HRBS resul t, while the SIMS result underestimates the nitrogen concentration.