K. Kimura et al., Nitrogen depth profiling in ultrathin silicon oxynitride films with high-resolution rutherford backscattering spectroscopy, JPN J A P 1, 39(7B), 2000, pp. 4663-4665
Nitrogen depth profiles in ultrathin silicon oxynitride films (2.5-8 nm) ar
e measured by high-resolution Rutherford backscattering spectroscopy (HRBS)
. In order to reduce the large background due to the substrate silicon, HRB
S spectra are measured under [111] channeling conditions. It is demonstrate
d that the HRBS/channeling technique provides the absolute concentration va
lues and a depth resolution of sub-nm can be achieved. The nitrogen profile
s are also measured by secondary ion mass spectroscopy (SIMS) and Auger ele
ctron spectroscopy (AES). The AES result roughly agrees with the HRBS resul
t, while the SIMS result underestimates the nitrogen concentration.