Stoichiometry study of S-terminated GaAs(001)-(2 x 6) surface with synchrotron radiation photoelectron spectroscopy

Citation
M. Shimoda et al., Stoichiometry study of S-terminated GaAs(001)-(2 x 6) surface with synchrotron radiation photoelectron spectroscopy, JPN J A P 1, 39(7A), 2000, pp. 3943-3946
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
7A
Year of publication
2000
Pages
3943 - 3946
Database
ISI
SICI code
Abstract
Synchrotron radiation photoelectron spectroscopy (SRPES) has been performed to investigate the surface stoichiometry of the S-terminated GaAs(001)-(2 x 6), and in particular, to determine the chemical species of the five dime rs, which are separated by missing dimers and from the unit structure of th e (2 x 6) reconstruction. The S 2p photoemission spectra show a significant decrease in the peak intensity with increasing substrate temperature, wher eas no significant changes are observed for the As 3d photoemission spectra The Ga 3d spectra are decomposed into a bulk component and more than one s urface component, one of which is attributed to a Ga-S bond and decreases i n accordance with the change observed in the S 2p spectra. These results st rongly support the model that each pair of the five dimers in the (2 x 6) r econstruction consists of S-S dimers.