Development of high-efficiency strip-coupled surface acoustic wave convolver using GaSb/InSb/AlGaAsSb/LiNbO3 structures

Authors
Goto, H Tsunashima, M Kanno, Y Yamagata, Y Kuze, N Yamanouchi, K
Citation
H. Goto et al., Development of high-efficiency strip-coupled surface acoustic wave convolver using GaSb/InSb/AlGaAsSb/LiNbO3 structures, JPN J A P 1, 39(5B), 2000, pp. 3036-3040
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
39
Issue
5B
Year of publication
2000
Pages
3036 - 3040
Database
ISI
SICI code
Abstract
We have fabricated a strip-coupled surface acoustic wave [SAW] convolver us ing GaSb/InSb/AlGaAsSb heterostructures grown on a LiNbO3 substrate. An InS b thin film with an AlGaAsSb buffer layer was frown on a 128 degrees Y-X Li NbO3 substrate by molecular beam epitaxy; a very high electron mobility of 7000 cm(2)/(vs) in 200-nm-thick InSb films was achieved. We have fabricated a strip-coupled SAW convolver as a new device and have achieved a very hig h output efficiency (F value) of -14 dBm for modified semiconductor and ele ctrode structures.