Spectral characteristics of vertically stacked etched multiple-quantum-wire lasers fabricated by flow rate modulation epitaxy

We report the spectral characteristics of AlGaAs-GaAs multiple-quantum-wire (QWR) lasers fabricated by flow rate modulation epitaxy on V-grooved subst rates. Room-temperature lasing from the fundamental state (1e-1hh) is gener ally observed in devices longer than 350 mu m; however, secondary peaks at the adjacent higher subbands are immediately detected following current inj ection. The evolution of the stimulated emission spectra is investigated he re. Typical threshold current and the wavelength tuning rate of current are observed to be 6.2 mA and 0.012 nm/mA, respectively, for 800-mu m-long unc oated cavities.