PdGe-based ohmic contact on n-GaAs with highly and poorly doped layers

Authors
Lim, JW Mun, JK An, SJ Nam, S Kwak, MH Kim, H Lee, JJ
Citation
Jw. Lim et al., PdGe-based ohmic contact on n-GaAs with highly and poorly doped layers, JPN J A P 1, 39(5A), 2000, pp. 2546-2549
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
39
Issue
5A
Year of publication
2000
Pages
2546 - 2549
Database
ISI
SICI code
Abstract
We report the ohmic contact formation mechanism for a low contact resistanc e PdGe-based system on a GaAs sample containing highly and poorly doped lay ers annealed in the temperature range of 380-450 degrees C. The lowest aver age specific contact resistance of the Pd/Ge/Ti/Pt ohmic contact was 2.4 x 10(-6) Omega.cm(2) after annealing at 400 degrees C. This was believed to b e due to the formation of a Ga5Pd compound. Cross-sectional scanning electr on microscopy and Auger electron spectroscopy were utilized in this study. The contact was thermally stable after isothermal annealing at 400 degrees C for 6 h.