A Monte Carlo study of current-voltage characteristics of the scaled-down single-electron transistor with a silicon rectangular parallelepiped quantum dot

The current-voltage characteristics of a silicon quantum-dot single-electro n transistor are investigated by Monte Carlo simulation. A simple rectangul ar parallelepiped quantum dot is assumed and the current is computed by cou nting the sequential tunneling of electrons through the energy level of the dot. In contrast to known features of the classical single electron transi stor, the obtained result shows a variety of current peak behaviors which a re closely related to the energy level structure of the dot. In particular, a characteristic bell-shaped envelope of current peaks is observed in Coul omb oscillation when electrons are transmitted through multiply degenerate energy levels. The current-voltage characteristics of the quantum-dot singl e-electron transistor depend sensitively on the electronic structure of the dot, reflecting the geometry and the material of the device.