Emission profile dependence of microcavity light emitting diodes

Citation
Ar. Pratt et al., Emission profile dependence of microcavity light emitting diodes, JPN J A P 1, 39(5A), 2000, pp. 2589-2590
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
5A
Year of publication
2000
Pages
2589 - 2590
Database
ISI
SICI code
Abstract
Data are presented to show the variation in the emitted radiation pattern o f semiconductor microcavity light emitting diodes (MC-LEDs) with different cavity mode de-tunings. Compared to a conventional non-cavity LED structure , a narrow single-lobed emission profile is only observed when the cavity m ode is de-tuned greater then 15 nm below the bare quantum well peak. For po sitively de-tuned MC-LEDs, the beam divergence broadens, and the far-field emission profiles exhibit a double-lobed emission pattern, which is sensiti ve to the pump level.