Oxygen doping effects on super-resolution scattering-mode near-field optical data storage

Citation
Lq. Men et al., Oxygen doping effects on super-resolution scattering-mode near-field optical data storage, JPN J A P 1, 39(5A), 2000, pp. 2639-2642
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
5A
Year of publication
2000
Pages
2639 - 2642
Database
ISI
SICI code
Abstract
Silver oxide (AgOx) was recently proposed as a new mask material to realize a scattering-mode super-resolution near-held structure (Super-RENS). To ob tain a further understanding of the influence of the Ge2Sb2Te5 recording la yer on the characteristics of scattering-mode Super-RENS, oxygen (O-2)-dope d GeSbTe films are examined in this study. The crystallization temperature T-c of the GeSbTe-(O) films increased with the O-2 flow ratio and was impro ved to 200 degrees C at the O-2 flow ratio of 0.1, It was found that light O-2 doping could improve the super-resolution to 80 nm and the readout dura bility against readout cycles in the scattering-mode Super-RENS could be gr eatly improved by light and heavy O-2 doping into GeSbTe films.