A general multiband transfer-matrix energy-band calculation approach for two-dimensional semiconductor structures

A general and efficient multiband transfer-matrix method based on the envel ope-function approximation (k.p method) was developed for the calculation o f electronic structures of two-dimensional semiconductor systems. A new sea rching strategy for the allowed energy in finite structures was adopted to avoid the generally encountered divergence problem of the transfer-matrix m ethod across the classical turning points. A specific continuity condition was selected to ensure the hermicity of the Hamiltonian operator. Electric and magnetic fields as well as strain along any direction can all be includ ed within a unified treatment and at no further expense in calculation. Exa mples including the in-plane dispersion in quantum wells, the influence of strain effects and electric field on the band structures of quantum wells, and the minibands in superlattices were calculated to illustrate the use of this multiband transfer-matrix scheme.