Difference between traps determined from transient capacitance and transient reverse current

The densities and energy levels of traps in silicon pin diodes are determin ed using the transient capacitance method (ICTS: isothermal capacitance tra nsient spectroscopy) as well as the transient reverse current method (DCTS, discharge current transient spectroscopy). The traps determined by ICTS ar e located in the i layer (i.e., the n(-) region) and affect the steady-stat e reverse current (i.e., a generation current). Conversely, the traps deter mined by DCTS are probably located at the surface of the substrate.