Optimum discharge condition of DC bias electron cyclotron resonance plasmasputtering for high quality Si epitaxial growth

An electron cyclotron resonance (ECR) plasma sputtering method, combined wi th DC substrate bias, has been developed to deposit single crystal thin fil ms at the low substrate temperature of 400 degrees C and a conventional bas e pressure of 5 x 10(-7) Torr. At the optimum discharge condition of deposi tion pressure of 2.2 mTorr and substrate bias of + 10 V, with both the ECR power and the rf power for sputtering of 500 W, crystallographically perfec t single crystal deposition was found to be possible. These results have be en interpreted as supplying a sufficient ion flux to adatoms while maintain ing a sufficiently low ion energy to avoid substrate and film damage during deposition.