A new lateral dual-gate thyristor with current saturation

A new lateral dual-gate thyristor was proposed and fabricated in order to e liminate the parasitic latch-up problem. The device exhibited the excellent current-saturation characteristic of a current density of 1200 A/cm(2), ev en at the high anode-gate voltage of 29 V, through the elimination of the p arasitic thyristor in the device structure. The device, which is suitable f or power integrated circuits (PICs) due to its lateral structure, also exhi bited good temperature characteristics appropriate for high-temperature ope rations.