Dependence of subthreshold hump and reverse narrow channel effect on the gate length by suppression of transient enhanced diffusion at trench isolation edge

For the first time to our knowledge, we have shown that subthreshold hump a nd reverse narrow channel effect characteristics depend on the gate length, and that the hump strength has a peak point at the Sate length where the t hreshold voltage is highest. In order to explain these effects, we proposed a new model in which the boron transient enhanced diffusion at the trench isolation edge is more suppressed than that at the middle channel. The simu lation results using the proposed model agreed well with the experimental r esults.