Oxide-mediated solid phase epitaxy (OMSPE) of silicon: A new low-temperature epitaxy technique using intentionally grown native oxide

A new low-temperature epitaxial technique is proposed, which utilizes the n ative oxide on the Si surface. A good quality epitaxial Si layer can be obt ained using solid phase epitaxy (SPE), mediated by an intentionally grown n ative oxide layer on the Si substrate. Oxygen coverage of 0.25 ML was deter mined to be most suitable for obtaining defect-free epitaxy. The mechanism of this new epitaxial technique is presented, based on a detailed investiga tion of defect formation due to the oxygen at the interface.