Comprehensive study of a new self-convergent programming scheme for split gate flash memory

Citation
Ahf. Chou et al., Comprehensive study of a new self-convergent programming scheme for split gate flash memory, JPN J A P 1, 39(4B), 2000, pp. 2219-2222
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
4B
Year of publication
2000
Pages
2219 - 2222
Database
ISI
SICI code
Abstract
A new sell-convergent constant current programming achieved by a ramp-up so urce voltage is extensively studied in this work. Based on the results of a constant programming current and self-convergent characteristics, several methods are presented to achieve accurate control. of multiple programmed s tates, Both efficient programming speed and excellent reliability are demon strated. The proposed programming technique is considered to be a promising candidate for high-speed, high-density, and low-power multilevel split gat e flash memory.