Kink-related excess noise in deep submicron partially and moderately fullydepleted unibond N-metal oxide semiconductor field effect transistor (MOSFET)

In this paper, the low-frequency excess noise due to the kink effect in dee p submicron unibond N-metal oxide semiconductor field effect transistor (N- MOSFETs) is investigated. Drain current power spectral density measurements are performed for partially and moderately fully depleted and body-tied de vices. Thr behavior of this effect with the frequency is thoroughly analyse d and the control of such a noise overshoot by applying a back-gate voltage is also demonstrated and discussed. A comparison between unibond and SIMOX technologies, in terms of noise behavior, is presented. Finally, the impac t of the body contact on the noise is also shown.