Comparison between high- and low-dose separation by implanted oxygen MOS transistors for low-power radio-frequency applications

In this work, metal-oxide-semiconductor (MOS) field effect transistors (MOS FET) fabricated on low- and high-dose separation by implanted oxygen (SIMOX ) substrates are compared in terms of RF performance. Combining S-parameter measurements with an accurate extraction method of small-signal model para meters enables us to investigate the RF performances of these two technolog ies and to evaluate the impact of the self-heating effect on silicon on ins ulator (SOI) MOSFET performances in this range. The cut-on frequency behavi or of these two SOI MOSFET types is therefore analysed. In addition, using an analytical model, the influence of the buried oxide thickness on the cop lanar transmission lines is investigated. All these results show the potent iality of the low-dose SIMOX technology for low-power radio-frequency appli cations.