Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation

Vertical pattern-dependent oxidation, a method of fabricating single-electr on transistors, has been advanced so that it can be applied to make various types of single-electron logic circuits. The improved method changes the p attern of Si to be oxidized from the original. Using the improved method, w e have demonstrated a single-electron transistor with a new structure and a current-switching device composed of the new single-electron transistors.