Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications

Quantum dot (QD) lasers have decisive advantages compared to quantum well l asers. Zero-dimensional charge carrier localization and reduction of charge carrier diffusion result in reduced non-radiative surface recombination an d thus possibly reduced facet overheating and larger catastrophic optical d amage (COD) threshold, crucial for high power operation. The emission wavel engths of 1100 nm-1300 nm are easily realized using QDs on GaAs substrate, not available with traditional quantum wells of the same material system. W e present results on metal-organic chemical vapor phase deposition (MOCVD) and molecular beam epitaxy (MBE) grown high power QD lasers (up to 4W front facet cw) based on InGaAs QDs on GaAs substrate.