Metal-organic vapor-phase epitaxial growth and characterization of quaternary AlGaInN

Citation
J. Han et al., Metal-organic vapor-phase epitaxial growth and characterization of quaternary AlGaInN, JPN J A P 1, 39(4B), 2000, pp. 2372-2375
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
4B
Year of publication
2000
Pages
2372 - 2375
Database
ISI
SICI code
Abstract
We report the growth and characterization of quaternary AlGaInN. A combinat ion of photoluminescence (PL), high-resolution X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant-PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperat ure PL emission at 351 nm (with 20%Al and S%In) renders initial evidence th at the quaternary could be used to provide confinement for GaInN (and possi bly GaN). AlGaInN/GaInN multiple quantum wells (MQWs) heterostructures have been grown; both XRD and PL measurement suggest the possibility of incorpo rating this quaternary into optoelectronic devices.