The study of the origin of the anomalously large thermoelectric power of Si/Ge superlattice thin film

We present the experimental framework Tor the origin of the anomalously lar ge thermoelectric power for Si and Au-doped Ge superlattice thin film. The thermoelectric power of the sample still remains anomalously large even tho ugh the superlattice structure begins to collapse. An amorphous Ge thin fil m displays large thermoelectric power. The crystallized samples have almost the same thermoelectric power as that of conventional SiGe bulk samples. T he main cause of this anomalously large thermoelectric power of Si/Ge super lattice thin films is amorphous Ge layer.