Simulation of temperature dependence of microwave noise in metal-oxide-semiconductor field-effect transistors

We present results of a two-demensional (2D) numerical simulation of high-f requency noise in a short-channel metal-oxide-semiconductor field-effect tr ansistors (MOSFET). Conventionally this noise in MOSFETs is treated as a th ermal noise with a rather slow temperature dependence of the noise spectra. On contrary, the results obtained indicate that this dependence is more of an exponential kind, typical for a shot noise. Shot noise is conventionall y related to a forward biased p-n junction where the current is mostly due to diffusion in the quasi-neutral region. We therefore speculate that most likely in short channel MOSFETs most of the high-frequency noise is produce d not in the cut-off region of the channel but near the source side of the channel where diffusion current component is dominant.