Molecular beam epitaxial growth of CdTe layers on InSb(111)A and B polar substrates

We report a study of CdTe layers grown by molecular beam epitaxy (MBE) on I nSb(111)A and InSb(111)B substrates. The CdTe/lnSb(111) heterostructures, p repared under different conditions, were characterized in-situ by reflectio n high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). Ex-situ atomic force microscopy (AFM) and Raman spectroscopy were al so applied. Our results indicate that In-Te compounds are formed at the int erface. The concentrations of these compounds depend on substrate preparati on, polarity of the (111) substrate, and annealing process before growth. A s shown by RHEED and AFM, CdTe grows nearly two dimensionally on the (111)B surface, whereas on the A face a three dimensional growth, with polycrysta lline regions, is obtained.