Absorption anisotropy for lattice matched GaAs/AlGaAs multiple quantum well structures under external anisotropic biaxial strain: Compression along [110] and tension along [(1)over-bar10]
Mf. Huang et al., Absorption anisotropy for lattice matched GaAs/AlGaAs multiple quantum well structures under external anisotropic biaxial strain: Compression along [110] and tension along [(1)over-bar10], JPN J A P 1, 39(4A), 2000, pp. 1776-1781
We report theoretical studies on the optical absorption anisotropy for exci
tonic transitions in lattice-matched GaAs/AlGaAs multiple quantum well (MQW
) structures under simultaneous compression and tension applied along the [
110] and [(1) over bar 10] directions of the MQW, respectively. The analyse
s are based on a model that includes both the 4 x 4 k.p Hamiltonian and the
strain Hamiltonian. The wave functions, found by solving the eigenvalue eq
uations, are used to calculate the dipole matrix elements for excitonic tra
nsitions and evaluate the anisotropic absorption properties. The effect of
variation of parameters such as well width and barrier height on the perfor
mance of the strained GaAs/AlGaAs MQW electroabsorption modulators is discu
ssed.