Development of photochemical analysis system for F-2-excimer laser lithography processes

A system for photochemical analysis of F-2-excimer laser lithography proces ses has been developed. The system, VUVES-4500, consists of 3 units: (1) an exposure and bake unit that uses the F-2-excimer laser to carry out a floo d exposure and then post-exposure bake (PEB), (2) a unit for measurement of the development rate of photoresists, and (3) a simulation unit that utili zes PROLITH of profile simulation software to calculate the resist profiles and process latitude using the measured development rate data. With this s ystem, preliminary evaluation of the performance of F-2-Exeimer laser litho graphy can be performed without the use of a lithography tool capable of im aging and alignment. Profiles for 150 nm Lines are simulated for the PAR-10 1 resist (manufactured by Sumitomo Chemical) and the SAL-601 resist (manufa ctured by Shipley), a chemically amplified resist that has sensitivity at t he F-2-exeimer laser wavelength. The simulation successfully predicts the r esist behavior. Thus it is confirmed that the system enables efficient eval uation of the performance of F-2-exeimer laser lithography processes.