Flat and large poly-Si grains by a continuous process of plasma-enhanced chemical vapor deposition of a-Si and its direct laser crystallization

A multichamber processor was developed for a 150 mm x 150 mm-sized substrat e which combines chemical vapor deposition (CVD) reactors and a laser annea ler. Deposition of a-Si was carried out at 430 degrees C using a new high-t emperature heater and the hydrogen content was reduced to 6 at%. The contin uous process of a-Si deposition and one-step direct laser crystallization p rovides a simple poly-Si preparation process which yields flat poly-Si grai ns (<R-rms: 4 nm). It was also found that dehydrogenation treatment increas ed film roughness.