Spatial distribution of the high-density microwave plasma and its effect on crystal silicon film growth

The spatial distribution of the high-density and low-temperature microwave plasma and its effect on the fast deposition of highly crystallized microcr ystalline silicon (mu c-Si:H) film are demonstrated through systematic depo sition and plasma diagnostics studies. The best film crystallinity is obtai ned under the condition in which the hot electron population and the distri bution of the ion beam energy impinging on the growing surface are minimum. The intentional control of the ion beam energy is also attempted using a m esh grid electrode to suppress the ion bombardment during film growth. A lo w and uniform ion beam energy is effective in promoting the film crystallin ity with less surface roughness and bulk inhomogeneities.