Control of the conduction type of nondoped high mobility beta-FeSi2 films grown from Si/Fe multilayers by change of Si/Fe ratios

Authors
Takakura, K Suemasu, T Ikura, Y Hasegawa, F
Citation
K. Takakura et al., Control of the conduction type of nondoped high mobility beta-FeSi2 films grown from Si/Fe multilayers by change of Si/Fe ratios, JPN J A P 2, 39(8A), 2000, pp. L789-L791
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
39
Issue
8A
Year of publication
2000
Pages
L789 - L791
Database
ISI
SICI code
Abstract
Highly [100]-oriented nondoped beta-FeSi2 continuous films were grown on Si (001) substrates from Si/Fe multilayers with different Si/Fe ratios (1.6-2 .0). It was found that the conduction type of the grown layer changed from p-type to n-type when the deposited Si/Fe ratio was increased, suggesting t hat the conduction type of nondoped beta-FeSi2 is governed by stoichiometry . Annealing of the samples at 900 degrees C for up to 14 h decreased the ca rrier density and increased the mobility, but did not change the conduction type. A p-type sample gave the highest hole mobility ever reported; 13000 cm(2)/V.s at 50 K.