Room temperature single-electron narrow-channel memory with silicon nanodots embedded in SiO2 matrix

The room-temperature operation of a single-electron narrow-channel memory d evice has been demonstrated by the combined fabrication of a narrow-channel (20 nm wide by 80 nm long) field-effect transistor (FET) defined by electr on-beam lithography and nanocrystalline Si (nc-Si) dots formed by annealing a thin film of SiOx (x < 2). Electrons are injected into nc-Si floating ga te dots in discrete units, as observed by the stepwise increase in the thre shold shift with writing bias, which is expected for Coulomb repulsion with in the nc-Si dot. Time-dependent measurement of the channel current under t he floating gate shows stepwise loss of charge, with a lifetime of each sto red electron of about 500 s at room temperature. Measurements at low temper ature (20 K) show similar discrete steps in memory writing.