Temperature dependence of the phonons of bulk AlN

Micro-Raman scattering measurements were performed on bulk wurtzite AIN cry stals over a temperature range from 10 K to 1275 K. The temperature depende nce of the frequency of the AIN phonons follows an empirical relationship p reviously introduced for diamond. A temperature-induced frequency shift of the E-2 phonon of -(2.22 +/- 0.02) x 10(-2) cm(-1)/K was determined for hig h temperatures, which is similar to values reported fur bulk GaN. The resul ts provide the basis for the non-invasive monitoring of the temperature of (Al,Ga)N by Raman scattering.