Ch. Ang et al., Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias, JPN J A P 2, 39(7B), 2000, pp. L757-L759
We have observed that excess low-field leakage currents generated by 10 keV
X-ray irradiation in thin gate oxides (4.5 nm) could be reduced by applyin
g a low gate bias to the oxides after irradiation, regardless of the polari
ty of the applied gate bias. The reduction rate of radiation-induced leakag
e current (RILC) increased with the applied gate bias and began to saturate
after 10(5) s. In addition, the reduction rate of RILC was significantly e
nhanced in a H-2 ambient, suggesting a strong link between the reduction of
RILC and trapped-hole annealing.