Slip-free rapid thermal processing in single wafer furnace

Defect generation phenomena in Si wafers during atmospheric pressure rapid thermal processing (RTP) in a single wafer furnace (SWF) are investigated a s a function of temperature, process time, wafer handling method and speed. The size, shape and spatial distribution of crystal defects generated duri ng RTP were characterized using an optical microscope and X-ray topography. The wafer handling method and speed are found to be very important in cont rolling defect generation during RTP under given process conditions. Highly reproducible slip-free RTP results were achieved in 200-mm-diameter Si waf ers processed at 1100 degrees C for 60 s (up to 5 times) by optimizing the wafer handling method and speed.