High-mobility poly-Si thin film transistors fabricated on stainless-steel foils by low-temperature processes using sputter-depositions

High mobility n- and p-channel polycrystalline Si thin him transistors (pol y-Si TFTs) are successfully fabricated on flexible stainless-steel foils th rough low-temperature processes (less than or equal to 200 degrees C). In t he low-temperature process, all films in the poly-Si TFT including active S i and gate SiO2 films are deposited by glow-discharge sputtering and the Si films are crystallized by KrF excimer laser irradiation. Resulting n- and p-channel poly-Si TFTs show excellent characteristics of mobility of 106 cm (2)/V.s and 66 cm(2)/V.s, respectively. Moreover, they shaw low off-current s of 1 x 10(-10) A and on/off current ratios as high as 1 x 10(6). Thus, th ese poly-Si TFTs are very promising for driver circuits and switching devic es in novel flat panel displays of lightweight and mechanically strong liqu id crystal displays and light emitting displays.