Improvement of annealing properties of SiC/Si structure

Properties of the SiC film/Si substrate structure annealed in a hydrogen at mosphere are investigated by scanning electron microscopy observation, X-ra y diffraction measurement and Auger electron spectroscopy analysis. Two typ es of defects, the line and point defects which are formed in vacuum anneal ing, are also observed in the SiC/Si structure annealed in hydrogen-atmosph ere, but the density of the point defects is little. The hydrogen atmospher e annealing results in high crystallinity of the SiC film, and low composit ional change at the surface of the SiC film.