Temperature dependence of barrier height and energy bandgap in Au/n-GaSb Schottky diode

The temperature dependence of barrier height and energy bandgap in Au/n-GaS b Schottky diode was first determined in a wide temperature range (156-316 K) by photoresponse measurement. While the energy bandgap of n-GaSb decreas es from 0.79 eV to 0.73 eV with an increase in temperature (from 156 K to 3 16 K), the barrier height of Au/n-GaSb also decreases from 0.69 eV to 0.57 eV. Though sulfide treatment was taken to modify the metal-semiconductor in terface, Fermi level at the interface was almost pinned (0.1-0.16 eV) above the valence band edge. Similar to semiempirical Varshni's law, using our e xperimental fitting, we obtained the temperature expressions of the barrier height and the energy bandgap of Au/n-GaSb Schottky diode.