Low temperature growth of GaAs on Si substrate by chemical beam epitaxy

We report on the growth of GaAs on Si substrates without a high temperature process over 500 degrees C using chemical beam epitaxy (CBE). First, the e pilayer grown on Si was preheated for 5 min at 400, 500 and 600 degrees C, respectively, and it was found that the preheating at 500 degrees C was suf ficient to remove an oxide on the Si surface. The dependence of the surface morphology on the growth condition during the nucleation stage was investi gated. As a result, it was found that a high growth rate and a high V/III r atio in the initial stage are required to grow high-quality GaAs on a Si su bstrate, and the quality of GaAs on Si grown in this research was better th an that grown by metalorganic chemical vapor deposition.