Effects of atomic hydrogen on the indium incorporation in InGaN grown by RF-molecular beam epitaxy

We investigated the effect of atomic hydrogen(H) irradiation on the In inco rporation in InGaN films grown by RF-molecular beam epitaxy (MBE). The mole cular hydrogen (H-2) and atomic H irradiation in InGaN growth by RF-MBE wer e found to enhance the In incorporation. The atomic H irradiation in InGaN growth increased the In incorporation with increasing H2 dow rate. The In i ncorporation for samples grown with H was higher than without H2 in the tem perature range of 640 degrees C to 700 degrees C. These results may represe nt a new and interesting avenue of investigation into the understanding of growth of III-nitride films. We consider that the mechanisms responsible fo r the modification of In incorporation by atomic H irradiation are mainly d ue to an increase of the nitrogen species and partly to suppression of 3-di mensional(3-D) growth thereby enhancing a 2-D growth.