Jd. Song et al., Molecular beam epitaxial growth of high-quality InP/InGaAs/InP heterostructure with polycrystalline GaAs and GaP decomposition sources, JPN J A P 2, 39(4B), 2000, pp. L347-L350
A high-quality InP/InGaAs/InP double heterostructure was grown by molecular
beam epitaxy (MBE) with polycrystalline GaAs and GaP decomposition sources
for group V elements. By rapidly changing the cell temperature of GaAs and
GaP decomposition sources during the growth switching period from InP to I
nGaAs and vice versa, a parasitic contamination-free InP/InGaAs/InP double
heterostructure was obtained. The photoluminescence linewidths are 4.8 meV
at 9 K for InGaAs on InP, and 1.76 meV at 9 K for InP on InGaAs, The X-ray
rocking curve linewidth of InGaAs is as low as 20 arcsec without side lobes
. These photoluminescence (PL) and X-ray measurement results are comparable
to the best MBE data ever reported. Secondary ion mass spectroscopy depth
profiles indicate that the contaminations due to the memory effect of group
V elements are suppressed below 3 orders of magnitude and the parasitic ga
llium incorporation from polycrystalline GaAs decomposition sources is belo
w 5 orders of magnitude, which are the best results obtained by MBE so far.