Current fluctuation characteristic of sub-0.1 micron device structures: A Monte Carlo study

Monte Carlo simulations of current fluctuation in Si n-i-n diode structures are carried out with various lengths of the intrinsic (channel) region so that electron transport under diffusive and quasi-ballistic regimes is cove red. It is shown that a new current fluctuation mode associated with the fl uctuation in the number of electrons in the channel region appears in sub-0 .1 mu m device structures. This is caused by the diffusion of high-energy e lectrons in the anode n-doped region; and is characteristic of sub-0.1 mu m device structures since high-energy electrons in the anode originate from quasi-ballistic transport in the channel.