Effect of heterobarrier leakage on the performance of high-power 1.5 mu m InGaAsP multiple-quantum-well lasers

Broad stripe 1.5 mu m InGaAsP/InP multiple-quantum-well graded-index separa te-confinement heterostructure lasers with different waveguide widths and d oping profiles were designed, fabricated, and characterized. A record value of more than 16 W of pulsed optical power was obtained from lasers with a broadened waveguide design. Studies of the characteristics of lasers with d ifferent p-doping profiles as well as modeling data show that the heterobar rier electron leakage is responsible for the effect of the device optical p ower saturation with current. (C) 2000 American Institute of Physics. [S002 1-8979(00)01319-0].