Bubble formation in organic light-emitting diodes

Citation
Ls. Liao et al., Bubble formation in organic light-emitting diodes, J APPL PHYS, 88(5), 2000, pp. 2386-2390
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
5
Year of publication
2000
Pages
2386 - 2390
Database
ISI
SICI code
0021-8979(20000901)88:5<2386:BFIOLD>2.0.ZU;2-C
Abstract
Bubbles in organic light-emitting diodes can be formed from gas release due to Joule heating effect at localized electrical shorts during operation, w hich could be simulated by a rapid thermal annealing. The gases in the bubb les consist of not only adsorbed moistures but also the decomposed organic species, which are detected in situ in an ultrahigh vacuum chamber. In the device of Al/tris-(8-hydroxyquinoline) aluminum (Alq/N,N'-diphenyl-N.N'-bis -{3-methylphenyl}{1,1'biphenyl}-4,4'-diamine/indium tin oxide (ITO), the ga ses released from ITO surface were mainly of adsorbed moistures, while thos e released from the organic layers were of both the decomposed products fro m Alq and the trapped moistures. The decomposition of Alq could not be easi ly avoided if there were severe localized electrical shorts in the devices. (C) 2000 American Institute of Physics. [S0021-8979(00)00613-7].