Multilayer systems containing one layer from amorphous silicon (a-Si) are a
nalyzed regarding the absorption of light and the distribution of the elect
rical field within them. The local electric field strength is derived from
the intensity of the Raman lines of the a-Si. Suitable designed multilayer
structures may provide more absorption of light in a layer of 55 nm and les
s than in bulk a-Si. Applications for thin layer solar cells are discussed.
(C) 2000 American Institute of Physics. [S0021-8979(00)00717-9].