Light absorption enhancement in thin silicon layers

Authors
Sukmanowski, J Paulick, C Sohr, O Andert, K Royer, FX
Citation
J. Sukmanowski et al., Light absorption enhancement in thin silicon layers, J APPL PHYS, 88(5), 2000, pp. 2484-2489
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
5
Year of publication
2000
Pages
2484 - 2489
Database
ISI
SICI code
0021-8979(20000901)88:5<2484:LAEITS>2.0.ZU;2-O
Abstract
Multilayer systems containing one layer from amorphous silicon (a-Si) are a nalyzed regarding the absorption of light and the distribution of the elect rical field within them. The local electric field strength is derived from the intensity of the Raman lines of the a-Si. Suitable designed multilayer structures may provide more absorption of light in a layer of 55 nm and les s than in bulk a-Si. Applications for thin layer solar cells are discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)00717-9].